1 2 10.2 0.2 1.3 0.2 8.9 0.3 0.8 0.1 5.0 0.5 1.3 0.1 2.2 0.3 1.4 0.2 4.5 0.2 15.8 0.5 0.4 0.1 2.5 0.25 pin 2.3 0.3 features m e t a l - s e m i c o n d u c t or j u n c t i o n w i t h g u a r d r i n g d 2 pak epitaxial construction low forward voltage drop,low switching losses high surge capability mechanical data c a s e : jedec d 2 pak,molded plastic terminals: leads solderable per mil- std-750,method 2026 polarity: as marked w e i g h t : 0.087 ounces,2.2 gram mounting position: any ratings at 25 ambient temperature unless otherwise specified. s i n g l e p h a s e , h a l f w a v e , 6 0 h z , r e s i s t i v e o r i n du c t i v e l o a d . f o r c a p a c i t i v e l o a d , d e r a te b y 2 0 % . s bl b sblb sblb sblb sblb sblb sblb sblb 203 0 ct 2035ct 2040ct 2045ct 2050ct 2060ct 2080ct 20100ct u n i t s maximum recurrent peak reverse voltage v r r m v ma x imu m rms v o l t a g e v r m s v ma x imu m dc bl oc ki ng v o lt a g e v dc v maximum average f orw ard rectified current t c =100 peak f orw ard surge current 8.3ms single half -sine-w ave s upe r i m p o s ed o n r a t ed l oad m a x i m um i n s t a n t an e ous f o r w a r d v o l t a g e @ 10 a v f v maximum reverse current @t c = 2 5 at rated dc blocking voltage @t c = 1 0 0 t y p i c a l t he r m a l r e s i s t a n c e ( n o t e 1 ) r jc /w operating junction temperature range t j storage temperature range t stg n o t e: 1 . thermal resistance junction to case. - 5 5 - -- + 1 25 30 35 40 45 50 60 80 100 i fsm 30 35 40 45 50 60 80 100 21 25 28 32 35 42 56 70 ma i r 1.0 a - 5 5 - -- + 1 5 0 1.5 0 . 55 0.75 0.85 250 50 s bl b 2 03 0 c t - - - s bl b 2 0100 c t a for use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications i f(av) s c h o tt k y b arr i e r r e c t i fi e r s v o l t a g e r a nge: 3 0 - - - 10 0 v curr e n t : 20 a the plastic material carries u/l recognition 94v-0 20 maximum ratings and electrical characteristics dimensions in millimeters diode semiconductor korea www.diode.kr
t j =25 pulse width=300 s 1 % d u ty c ycle .1 .3 .5 .7 .9 1 .1 1 .3 1 .5 1 .7 1 .9 2 .1 1 1 0 1 0 0 2 0 0 SBLB2030CT-sblb2045ct sblb2050ct-sblb2060ct sblb2080ct-sblb20100ct 10 04060 20 100 120 140 80 t c = 2 5 0.1 1.0 .01 tc=100 0 5 1 0 025 75 15 2 0 125 50 50 100 0 50 1 100 250 10 0 15 0 20 0 10 8.3ms single half sine wave t j =125 amperes average forward output current, amperes fi g. 3 -- typical forward characteri sti c fi g. 4 -- typi cal reverse characteristi c instantaneous forward voltage, volts SBLB2030CT - - - sblb20100ct nu m be r o f c y c l e s a t 6 0 h z case t e m pe r a t ur e , instantaneous forward current, peak forward surge current, f i g . 2 - - f o r w ard d e ra t i n g cur v e amperes micro amperes percent of rated peak reverse voltage fi g. 1 -- peak forward surge current instantaneous reverse current, www.diode.kr diode semiconductor korea
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